STMICROELECTRONICS STW4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V Miller DS-10 This chart has been designed

This chart has been designed with that philosophy in mind and works equally well in engineering or production work

It has a minimum attenuation and low VSWR

Provides improved handling and control when the camera is used in the portrait orientation

Enables an Unimpeded Meridian Flip

STMICROELECTRONICS STW4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V Miller DS-10 This chart has been designedThe STW4N150 is a 1500V N channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Intrinsic capacitances and Qg minimized